[23a-C106-1~8] 12.2 Characterization and Materials Physics

[23a-C106-7] Evaluation of Carrier Transport in Organic Antiambipolar Transistors by Operando Kelvin Force Microscopy

〇Soichiro Takeiri^1,2, Ryoma Hayakawa¹, Yoichi Yamada², Yutaka Wakayama¹ (1.NIMS, 2.Tsukuba Univ.)

Keywords:organic antiambipolar transistors, operando kelvin force microscopy, carrier transport mechanism

Organic antiambaipolar transistors (AATs) have a negative differential transconductance (NDT) at room temperature. This feature makes the transistor unique. In this study, we used operand Kelvin force microscopy to unveil the carrier transport mechanism. We observed potential gradients in both the n-type and p-type semiconductors when the transistor was in on-state. This is because the electron and hole currents flow in the transistor channels. In contrast, a large potential drop was found to be induced in either semiconductor layer in the NDT range, which is ascribed to the formation of a depletion layer. The depletion layer hindered the carrier transport, leading to the suppression in the drain current.