The 83rd JSAP Autumn Meeting 2022

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[23a-C200-1~11] 15.4 III-V-group nitride crystals

Fri. Sep 23, 2022 9:00 AM - 12:00 PM C200 (C200)

Hiroto Sekiguchi(Toyohashi Univ. of Tech.), Kenjiro Uesugi(Mie Univ.)

10:30 AM - 10:45 AM

[23a-C200-6] [Young Scientist Presentation Award Speech] Introduction of 2D-hetero structures to improve the Q-factor of III-nitride-based photonic crystal resonators in the visible range

Takenori Iwaya1, Shuhei Ichikawa1,2, Dolf Timmerman1, Jun Tatebayashi1, Yasufumi Fujiwara1 (1.Osaka Univ., 2.Research Center for UHVEM, Osaka Univ.)

Keywords:Photonic crystal cavity, III-nitride semiconductor, GaN:Eu

III-nitride-based two-dimensional photonic crystal cavities have wide potential applications, such as quantum information technologies and low threshold laser, however, high-Q-factors have been not achieved yet. Previously, we utilized an H3-type cavity and reported a high experimental Q-factor of 7900, which is the maximum value among the existing reports. In this study, we designed and fabricated a cavity with a two-dimensional heterostructure and achieved a higher Q-factor exceeding 10,000.