[23a-C200-1~11] 15.4 III-V-group nitride crystals

[23a-C200-7] Analysis of optical characterization of InGaN-MQW meso-porous membrane

〇Umito Kurabe¹, Yuki Yamazaki¹, Koji Yoneta¹, Akihiko Kikuchi^1,2,3 (1.Sophia Univ., 2.Sophia Photonics Research Center, 3.Sophia Semiconductor Research Institute)

Keywords:Nitride, GaN

Micro LED display technology has been attracting great interest, but the issue is the decrease in luminescence efficiency in micro LEDs of less than 100 μm per side, which is the basis of the technology.We have proposed an InGaN/GaN porous membrane structure as a promising structure to improve the performance of micro LEDs, and reported the observation of high luminescence enhancement and the investigation of the enhancement mechanism. In this report, we report the quantitative clarification of the luminescence enhancement mechanism, taking into account the improvement of the analysis accuracy by 3D FDTD and the reduction of the luminescence volume, aiming at a more advanced clarification of the enhancement mechanism.