[23a-C200-1~11] 15.4 III-V-group nitride crystals

△ [23a-C200-8] Demonstration of GaN:Eu/GaN nanowire LEDs towards flexible light-emitting devices

〇Takaya Otabara¹, Jun Tatebayashi^1,2, Takuma Yoshimura¹, Timmerman Dolf¹, Shuhei Ichikawa^1,3, Yasufumi Fujiwara¹ (1.Grad. Sch. Eng. ,Osaka Univ., 2.QIQB, 3.Research Center for UHVEM)

Keywords:nanowire, LED, GaN

We report on the growth of GaN:Eu/GaN nanowire (NW) LED by OrganoMetalic Vapar Phase Epitaxy (OMVPE) and NW LED devices fabrication process towards flexible light-emitting devices. After growth of GaN:Eu/GaN NW LED, we fabricated NW LED device structure using flexible membranes. Furthermore, we observed clear rectification characteristic from the I-V characteristics of GaN:Eu/GaN NWs and red luminescence due to Eu³⁺ ions at room temperature under current injection.