[23a-P06-1~28] 21 Joint Session K "Wide bandgap oxide semiconductor materials and devices"(Poster)

[23a-P06-23] Low-Temperature Formation of Indium Oxide Thin-Films using Excimer Light by Aqueous Precursor Solution and Characterization of Thin-Film Transistors

〇Takeaki Komai¹, Kazuyori Oura¹, Hideo Wada¹, Masatoshi Koyama¹, Shigehiko Sasa¹, Toshihiko Maemoto¹, Noritaka Takezoe², Akihiro Shimizu², Hiroyasu Ito² (1.Osaka Inst. of Tech., 2.Ushio Inc.)

Keywords:In2O3, Thin-Film Transistor, Ultraviolet rays

We are conducting research on the solution process of oxide thin films and focused on the fact that molecules with bond energy of 695 kJ/mol or less can be easily cleaved by irradiating with excimer light (wavelength 172 nm), which is one of the ultraviolet rays. This time, we report the results of structural analysis and thin film transistor characteristics of In₂O₃ thin films formed by a process of 200℃ or lower using excimer light and an aqueous precursor solution as a starting material.