Epitaxial Growth of High-Purity beta-Ga<sub>2</sub>O<sub>3</sub> by Using Gallium Sub-Oxide

QuangTu Thieu; Kohei Sasaki; Akito Kuramata

Presentation information

Poster presentation

21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21 Joint Session K "Wide bandgap oxide semiconductor materials and devices"(Poster)

[23a-P06-1~28] 21 Joint Session K "Wide bandgap oxide semiconductor materials and devices"(Poster)

Fri. Sep 23, 2022 9:30 AM - 11:30 AM P06 (Arena)

9:30 AM - 11:30 AM

[23a-P06-25] Epitaxial Growth of High-Purity beta-Ga₂O₃ by Using Gallium Sub-Oxide

〇QuangTu Thieu¹, Kohei Sasaki¹, Akito Kuramata¹ (1.Novel Crystal)

Keywords:Ga2O3, impurity, sub-oxide

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Presentation information

[23a-P06-1~28] 21 Joint Session K "Wide bandgap oxide semiconductor materials and devices"(Poster)

[23a-P06-25] Epitaxial Growth of High-Purity beta-Ga2O3 by Using Gallium Sub-Oxide

[23a-P06-25] Epitaxial Growth of High-Purity beta-Ga₂O₃ by Using Gallium Sub-Oxide