[23p-A202-1~16] 6.2 Carbon-based thin films

[23p-A202-5] Effect of Nitrogen Doping on Electron Spin Properties of NV Centers

〇(D)Kosuke Kimura^1,2, Shinobu Onoda², Roberto Sailer³, Timo Joas³, Ressa Said³, Keisuke Yamada², Wataru Kada¹, Tokuyuki Teraji⁴, Junichi Isoya⁵, Nozomu Kosuge^1,2, Tomoya Baba^1,2, Fedor Jelezko³, Osamu Hanaizumi¹, Takeshi Ohshima² (1.Gunma Univ., 2.QST, 3.Univ. of Ulm, 4.NIMS, 5.Univ. of Tsukuba)

Keywords:NV center, qubit, ion implantation

Nitrogen-vacancy (NV) center in diamond is known as a solid-state spin qubit at room temperature. NV centers coherently coupled by dipole-dipole interactions have a potential to accomplish quantum registers at room temperature. We have been developing an organic compound ion implantation technique to apply dipole coupled NV centers as quantum resisters. In our previous presentation, we showed the result of creation of NV centers by phthalocyanine (C₃₂N₈H₁₈) ion implantation and issue of short coherence time (T₂) of NV center electron spin created by C₃₂N₈H₁₈ ion implantation. We hypothesized that the negative charge stability could be enhanced by changing the impurity concentration in the diamond, resulting in an improvement of T₂. In this study, we implanted C₃₂N₈H₁₈ ions into diamonds with different nitrogen impurity concentrations and compared the T₂.