[23p-B201-1~12] 10.4 Spintronics in semiconductor, topological material, superconductor, and multiferroics

▼ [23p-B201-10] Persistent spin helix state in a (113) quantum well: Contrast spin dynamics between (001) and (113) GaAs/AlGaAs two-dimensional electron gas

〇Junsei Kitagawa¹, Daisuke Iizasa¹, Michael Prager², Ryo Tokimitsu³, Jun Ishihara³, Takachika Mori³, Shutaro Karube¹, Chaoliang Zhang⁴, Michael Kammermeier⁵, Uli Zuelicke⁵, Dieter Schuh², Dominique Bougeard², Junsaku Nitta^1,6, Makoto Kohda^1,6,7,8 (1.Grad. Sch. of Eng., Tohoku Univ., 2.Dept. of Phys. Univ. Regensburg, 3.Dep. of Appl. Phys., Tokyo Univ. of Sci., 4.FRIS, Tohoku Univ., 5.Dept. of Chem. Phys. Sci Victoria Univ of Wellington, 6.CSIS, Tohoku Univ., 7.FRiD, Tohoku Univ., 8.QUARC, QST)

Keywords:spin-orbit interaction, persitent spin helix, two-dimensional electron gas

Persistent spin helix (PSH) is one of the most important states to precisely manipulate spins and have much longer spin lifetime via Rashba and Dresselhaus spin-orbit interactions (SOIs). Recently, a specific crystal plane of GaAs quantum well (QW) such as (113) has been theoretically predicted to stabilize the PSH state with minimal Rashba SOI, leading to easily realizing the PSH state. However, such regime dominated by Dresselhaus SOI has not yet been deeply understood. In this study, we have observed quite different spin dynamics in exactly the same structure (113) and (001) GaAs QW with double-sided modulation doping for the negligible Rashba SOI by using time-resolved Kerr rotation microscopy at 15 K. While spin helix was formed in the (113) QW, isotropic spin texture was formed in the (001) QW. This difference is driven by the symmetry of Dresselhaus SOI and the results were in good agreement with theoretical predictions.