[23p-B203-1~13] 17.3 Layered materials

△ [23p-B203-11] Electronic structure of the wide-bandgap semiconductor h-BN measured by micro-focused soft x ray angle-resolved photoemission spectroscopy

〇(DC)Hiroaki Tanaka¹, Masaru Kobayashi², Yuto Fukushima¹, Yosuke Arai¹, Takushi Iimori¹, Kohei Yamagami³, Yoshinori Kotani³, Fumio Komori⁴, Kenta Kuroda⁵, Takeshi Kondo¹, Takao Sasagawa² (1.ISSP, Univ. of Tokyo, 2.MSL, Tokyo Tech., 3.JASRI, 4.IIS, Univ. of Tokyo, 5.Hiroshima Univ.)

Keywords:ARPES, wide-bandgap semiconductor

Angle-resolved photoemission spectroscopy (ARPES) is an experimental method to directly observe the electronic structure of a crystal using the photoelectron effect. Since the sample need to be conductive to compensate emitted photoelectrons, it cannot measure insulators and wide-bandgap semiconductors. However, recently ARPES measurements of a wide-bandgap semiconductor by making a thin flake, which is much more conductive than bulk crystals, have been reported. In this presentation, we report the ARPES measurement results of the wide-bandgap semiconductor h-BN by the similar method.