[23p-B203-1~13] 17.3 Layered materials

[23p-B203-2] Asymmetric linear magnetoresistance in two-dimensional ferromagnetic polycrystalline layered material MoS₂

〇Iriya Muneta¹, Takanori Shirokura¹, Pham Nam Hai¹, Kuniyuki Kakushima¹, Kazuo Tsutsui¹, Hitoshi Wakabayashi¹ (1.Tokyo Tech)

Keywords:two-dimensional layered material, transition metal dichalcogenide, spintronics

Three-dimensional ferromagnets possess stable non-volatility, but large energy is required for their state change. In two-dimensional ferromagnets, ferromagnetic-antiferromagnetic transition occurs according to the layer number, and thus, magnetic order would easily change. Therefore, it is anticipated that stability and easy change of states are compatible. In this work, we measured magnetoresistance in ferromagnetic polycrystalline MoS₂, in which we observed even symmetric positive magnetoresistance. Additionally, asymmetric linear magnetoresistance is observed. The detail is discussed on the day.