[23p-B204-1~9] 13.7 Compound and power devices, process technology and characterization

[23p-B204-7] Annealing temperature dependence of depth distribution of trap density in ultra-low concentration Si-ion implanted GaN

〇Hiroko Iguchi¹, Masahiro Horita^1,2, Jun Suda^1,2 (1.Nagoya Univ., 2.IMaSS, Nagoya Univ.)

Keywords:galium nitride, point defect, ion implantation

We reported last time that donor-like defects were formed in the implanted region by annealing at 900-1100 °C after implanting Si ions with a peak concentration that was 10 times or more lower than the Si concentration in the n-type epitaxial growth layer. This time, we report the results of investigating the trap levels in ultra-low concentration Si-implanted samples and their density distribution in the depth direction by DLTS method.