[23p-C101-1~12] 13.2 Exploratory Materials, Physical Properties, Devices

△ [23p-C101-9] Low Thermal Resistance of GaN Devices with Bi-layer High Thermal Conductive Carbon Composite

〇Kenji Oosaki¹, Hiroto Saito¹, Atsushi Tanaka², Tadamoto Suga³, Kai Takeuchi³, Akio Wakejima¹ (1.Nagoya Institute of Technology, 2.Nagoya University, 3.Meisei University)

Keywords:Carbon, GaN, Thermal Resistance