Poster presentation

[20a-P08-1~2] 13.2 Exploratory Materials, Physical Properties, Devices

Tue. Sep 20, 2022 9:30 AM - 11:30 AM P08 (Arena)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:30 AM - 11:30 AM

[20a-P08-1] Optical properties CrSi₂ thin films prepared by pulsed laser deposition method

〇(M2)Kaichi Tasaki¹, Kei Hayashi¹, Tomohisa Takamatsu¹, Jing-Feng Li^1,2, Yuzuru Miyazaki¹ (1.Tohoku Univ., 2.Tsinghua Univ.)

9:30 AM - 11:30 AM

[20a-P08-2] The effects of Substitution to Thiocyanate Anion for (FA)PbI₃

〇(D)Takuya Ohmi¹, Takumi Nishikubo^2,1, Masaki Azuma^1,2, Takafumi Yamamoto¹ (1.MSL Tokyo Tech., 2.KISTEC)

Oral presentation

[23a-C101-1~12] 13.2 Exploratory Materials, Physical Properties, Devices

Fri. Sep 23, 2022 9:00 AM - 12:15 PM C101 (C101)

Haruhiko Udono(Ibaraki Univ.), Hirokazu Tatsuoka(Shizuoka Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[23a-C101-1] Optimization of the post-annealing condition for BaSi₂ films

〇Shunsuke Narita¹, Sho Aonuki¹, Kaori Takayanagi¹, Kaoru Toko¹, Takashi Suemasu¹ (1.Tsukuba Univ.)

9:15 AM - 9:30 AM

△ [23a-C101-2] Fabrication and evaluation of BaSi₂ films on Si₃N₄ insulators for thermoelectric applications

〇Kazuki Kido¹, Hayato Hasebe¹, Yoichiro Koda², Masami Mesuda², Kaoru Toko¹, Takashi Suemasu¹ (1.Univ. Tsukuba, 2.Tosoh Corp.)

9:30 AM - 9:45 AM

▲ [23a-C101-3] Synthesis of Fe-silicides from Fe and CaSi₂ powders in NaCl molten salt

Jilani Ansari¹, Fumio Komeda¹, Yosuke Shimura^1,2, 〇Hirokazu Tatsuoka¹ (1.Grad. Sch. Integr. Sci. & Technol. Shizuoka Univ., 2.RIE, Shizuoka Univ.)

9:45 AM - 10:00 AM

[23a-C101-4] Reduction of Cracks and Thick Film Deposition of BaSi₂ by Vacuum Evaporation

〇Katsushi Nishino¹, Shunnosuke Mori¹, Sonoka Yamashita¹, Kyoka U¹ (1.Tokushima Univ.)

10:00 AM - 10:15 AM

[23a-C101-5] Fabrication of high Hall density p-type B-doped BaSi₂ films formed by sputtering

〇Hayato Hasebe¹, Kazuki Kido¹, Haruki Takenaka¹, Masami Mesuda², Kaoru Toko¹, Takashi Suemasu¹ (1.Tsukuba Univ., 2.Tosoh Corp.)

10:15 AM - 10:30 AM

[23a-C101-6] The effect of oxygen on the properties of BaSi₂ films

〇Ai Iwai¹, Sho Aonuki¹, Shunsuke Narita¹, Kaori Takayanagi¹, Kaoru Toko¹, Takashi Suemasu¹ (1.Univ. Tsukuba)

10:45 AM - 11:00 AM

[23a-C101-7] PL properties in SiO₂/β-FeSi₂/SiO₂ stacked structures

〇Ren Yoshihara¹, Yuya Oishi¹, Yoshikazu Terai¹ (1.Kyushu Inst. of Tech.)

11:00 AM - 11:15 AM

[23a-C101-8] Temperature dependence of 1.5 µm photoluminescence in Si/β-(Fe_1-xRu_x)Si₂/Si structure.

〇Yuya Oishi¹, Ren Yoshihara¹, Yoshikazu Terai¹ (1.Kyushu Inst. of Tech)

11:15 AM - 11:30 AM

[23a-C101-9] Effect of deposition conditions on Zn_1-xGe_xO_y interlayer for BaSi₂ solar cells

〇Kaori Takayanagi¹, Yudai Yamashita¹, Kaoru Toko¹, Takashi Suemasu¹ (1.Tsukuba Univ.)

11:30 AM - 11:45 AM

[23a-C101-10] Fabrication of p-NiO/n-BaSi₂ hetero-junction solar cells on glass substrates

〇Haruki Takenaka¹, Hayato Hasebe¹, Kazuki Kido¹, Masami Mesuda², Kaoru Toko¹, Takashi Suemasu¹ (1.Tsukuba Univ., 2.Tosoh Corporation)

11:45 AM - 12:00 PM

[23a-C101-11] Temperature dependent J-V and C-V properties of Ni/Mg₂Si Schottky diode

〇Makoto Chiba¹, Haruhiko Udono¹ (1.Ibaraki Univ.)

12:00 PM - 12:15 PM

[23a-C101-12] Study on photosensitivity of Mg₂Si photodiodes with front and back side photo incidence structures

〇Rikuto Nakamura¹, Daiju Tsuya², Misa Yoshida², Haruhiko Udono¹ (1.Ibaraki Univ., 2.NIMS)

Oral presentation

[23p-C101-1~12] 13.2 Exploratory Materials, Physical Properties, Devices

Fri. Sep 23, 2022 1:45 PM - 5:00 PM C101 (C101)

Takashi Suemasu(Univ. of Tsukuba), Yoshikazu Terai(Kyushu Inst. of Tech.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:45 PM - 2:00 PM

[23p-C101-1] Electronic states of thin-film solar-cell material BaSi₂

〇Motoharu Imai¹ (1.NIMS)

2:00 PM - 2:15 PM

▲ [23p-C101-2] Study of discriminating between boron related defects in BaSi₂ by density functional
theory approach

〇(D)Yuguang Cao^1,2, Jean-Marie Mouesca², Serge Gambarelli², Takashi Suemasu¹ (1.Tsukuba Univ., 2.Grenoble Alpes Univ., CNRS, CEA, INAC-SyMMES)

2:15 PM - 2:30 PM

▲ [23p-C101-3] Structural design of high-efficiency BaSi₂ solar cells using ETL and HTL

〇(DC)Rui Du¹, Sho Aonuki¹, Hayato Hasebe¹, Kazuki Kido¹, Haruki Takenaka¹, Masami Mesuda², Kaoru Toko¹, Takashi Suemasu¹ (1.Tsukuba Univ., 2.Tosoh Corp.)

2:30 PM - 2:45 PM

△ [23p-C101-4] Controlling conductivity type and solar cell application of B-ion-implanted p-BaSi₂ films

〇Sho Aonuki¹, Kaoru Toko¹, Takashi Suemasu¹ (1.Univ. Tsukuba)

2:45 PM - 3:00 PM

[23p-C101-5] Analysis of Growth Behavior of Crystal Grains in Multicrystalline Mg₂Si

〇Takumi Deshimaru¹, Kenta Yamakoshi¹, Kentaro Kutsukake², Takuto Kojima³, Tsubasa Umehara⁴, Haruhiko Udono⁴, Noritaka Usami¹ (1.Graduate School of Eng., Nagoya Univ., 2.AIP, RIKEN, 3.Graduate School of Info., Nagoya Univ., 4.Graduate School of Sci. and Eng., Ibaraki Univ.)

3:00 PM - 3:15 PM

[23p-C101-6] Phase relationship of Sr-Si system with Si concentration larger than 55 at. %

〇Motoharu Imai¹ (1.NIMS)

3:30 PM - 3:45 PM

[23p-C101-7] Single crystal growth and physical properties of NaAlGe

〇Takahiro Yamada¹, Daigorou Hirai², Tamio Oguchi³, Hisanori Yamane¹, Zenji Hiroi⁴ (1.IMRAM, Tohoku Univ., 2.Sch. Eng., Nagoya Univ., 3.CSRN, Osaka Univ., 4.ISSP, Univ. of Tokyo)

3:45 PM - 4:00 PM

▼ [23p-C101-8] Optical and Electronic Properties of the Type II Ge Clathrate Film and Effects of Si/Al Doping

〇Rahul Kumar¹, Shiori Kurita², Tun Naing Aye², Tamio Iida¹, Hitoe Habuchi¹, Fumitaka Ohashi³, Himanshu S. Jha³, Tetsuji Kume^2,3 (1.National Inst. of Technology, Gifu College, 2.Graduate School of Natural Science and Technology, Gifu Univ., 3.Faculty of Engineering, Gifu Univ.)

4:00 PM - 4:15 PM

△ [23p-C101-9] Low Thermal Resistance of GaN Devices with Bi-layer High Thermal Conductive Carbon Composite

〇Kenji Oosaki¹, Hiroto Saito¹, Atsushi Tanaka², Tadamoto Suga³, Kai Takeuchi³, Akio Wakejima¹ (1.Nagoya Institute of Technology, 2.Nagoya University, 3.Meisei University)

4:15 PM - 4:30 PM

△ [23p-C101-10] Hole concentration reduction in CuI by Zn substitution and its mechanism

〇Masatake Tsuji¹, Soshi Iimura^1,2,3, Junghwan Kim^1,3, Hideo Hosono^1,2 (1.MCES Tokyo Tech., 2.NIMS, 3.PRESTO)

4:30 PM - 4:45 PM

[23p-C101-11] Transport property of germanane thin film with high hole mobility

〇(M2)Daiki Kobayashi¹, Yumiko Katayama¹, Yuhsuke Yasutake¹, Susumu Fukatsu¹, Kazunori Ueno¹ (1.Univ. Tokyo)

4:45 PM - 5:00 PM

△ [23p-C101-12] Evaluation of impurity doped GaAsN using X-ray reciprocal lattice mapping

〇Ko Inoue¹, Takumasa Tsunoda¹, Takashi Tsukasaki¹, Miki Fujita², Toshiki Makimoto¹ (1.Waseda Univ., 2.NIT, Ichinoseki College)

Sessions

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[20a-P08-1~2] 13.2 Exploratory Materials, Physical Properties, Devices

[20a-P08-1] Optical properties CrSi₂ thin films prepared by pulsed laser deposition method

[20a-P08-2] The effects of Substitution to Thiocyanate Anion for (FA)PbI₃

[23a-C101-1~12] 13.2 Exploratory Materials, Physical Properties, Devices

[23a-C101-1] Optimization of the post-annealing condition for BaSi₂ films

△ [23a-C101-2] Fabrication and evaluation of BaSi₂ films on Si₃N₄ insulators for thermoelectric applications

▲ [23a-C101-3] Synthesis of Fe-silicides from Fe and CaSi₂ powders in NaCl molten salt

[23a-C101-4] Reduction of Cracks and Thick Film Deposition of BaSi₂ by Vacuum Evaporation

[23a-C101-5] Fabrication of high Hall density p-type B-doped BaSi₂ films formed by sputtering

[23a-C101-6] The effect of oxygen on the properties of BaSi₂ films

[23a-C101-7] PL properties in SiO₂/β-FeSi₂/SiO₂ stacked structures

[23a-C101-8] Temperature dependence of 1.5 µm photoluminescence in Si/β-(Fe_1-xRu_x)Si₂/Si structure.

[23a-C101-9] Effect of deposition conditions on Zn_1-xGe_xO_y interlayer for BaSi₂ solar cells

[23a-C101-10] Fabrication of p-NiO/n-BaSi₂ hetero-junction solar cells on glass substrates

[23a-C101-11] Temperature dependent J-V and C-V properties of Ni/Mg₂Si Schottky diode

[23a-C101-12] Study on photosensitivity of Mg₂Si photodiodes with front and back side photo incidence structures

[23p-C101-1~12] 13.2 Exploratory Materials, Physical Properties, Devices

[23p-C101-1] Electronic states of thin-film solar-cell material BaSi₂

▲ [23p-C101-2] Study of discriminating between boron related defects in BaSi₂ by density functional
theory approach

▲ [23p-C101-3] Structural design of high-efficiency BaSi₂ solar cells using ETL and HTL

△ [23p-C101-4] Controlling conductivity type and solar cell application of B-ion-implanted p-BaSi₂ films

[23p-C101-5] Analysis of Growth Behavior of Crystal Grains in Multicrystalline Mg₂Si

[23p-C101-6] Phase relationship of Sr-Si system with Si concentration larger than 55 at. %

[23p-C101-7] Single crystal growth and physical properties of NaAlGe

▼ [23p-C101-8] Optical and Electronic Properties of the Type II Ge Clathrate Film and Effects of Si/Al Doping

△ [23p-C101-9] Low Thermal Resistance of GaN Devices with Bi-layer High Thermal Conductive Carbon Composite

△ [23p-C101-10] Hole concentration reduction in CuI by Zn substitution and its mechanism

[23p-C101-11] Transport property of germanane thin film with high hole mobility

△ [23p-C101-12] Evaluation of impurity doped GaAsN using X-ray reciprocal lattice mapping

Authenticate

Sessions

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[20a-P08-1~2] 13.2 Exploratory Materials, Physical Properties, Devices

[23a-C101-1~12] 13.2 Exploratory Materials, Physical Properties, Devices

△ [23a-C101-2] Fabrication and evaluation of BaSi2 films on Si3N4 insulators for thermoelectric applications

▲ [23a-C101-3] Synthesis of Fe-silicides from Fe and CaSi2 powders in NaCl molten salt

[23p-C101-1~12] 13.2 Exploratory Materials, Physical Properties, Devices

▲ [23p-C101-2] Study of discriminating between boron related defects in BaSi2 by density functionaltheory approach

▲ [23p-C101-3] Structural design of high-efficiency BaSi2 solar cells using ETL and HTL

△ [23p-C101-4] Controlling conductivity type and solar cell application of B-ion-implanted p-BaSi2 films

▼ [23p-C101-8] Optical and Electronic Properties of the Type II Ge Clathrate Film and Effects of Si/Al Doping

△ [23p-C101-9] Low Thermal Resistance of GaN Devices with Bi-layer High Thermal Conductive Carbon Composite

△ [23p-C101-10] Hole concentration reduction in CuI by Zn substitution and its mechanism

△ [23p-C101-12] Evaluation of impurity doped GaAsN using X-ray reciprocal lattice mapping

Authenticate

△ [23a-C101-2] Fabrication and evaluation of BaSi₂ films on Si₃N₄ insulators for thermoelectric applications

▲ [23a-C101-3] Synthesis of Fe-silicides from Fe and CaSi₂ powders in NaCl molten salt

▲ [23p-C101-2] Study of discriminating between boron related defects in BaSi₂ by density functional
theory approach

▲ [23p-C101-3] Structural design of high-efficiency BaSi₂ solar cells using ETL and HTL

△ [23p-C101-4] Controlling conductivity type and solar cell application of B-ion-implanted p-BaSi₂ films