Nanoscale distribution of subgap excitations in β-Si<sub>3</sub>N<sub>4</sub> observed by valence EELS using low-voltage monochromated STEM

Presentation information

Oral presentation

13 Semiconductors » 13.3 Insulator technology

Fri. Sep 23, 2022 1:15 PM - 5:00 PM C102 (C102)

Takanobu Watanabe(Waseda Univ.), Koji Kita(Univ. of Tokyo)

1:15 PM - 1:30 PM

〇Takanori Asano¹, Manabu Tezura¹, Masumi Saitoh¹, Hiroki Tanaka¹, Jun Kikkawa², Koji Kimoto² (1.Kioxia, 2.NIMS)

Keywords:Silicon Nitride, STEM, EELS