[23p-C102-1~14] 13.3 Insulator technology

[23p-C102-8] Stress of Al₂O₃ film by ALD using high purity ozone

〇Takayuki Hagiwara¹, Soichiro Motoda¹, Naoto Kameda¹, Ken Nakamura², Hidehiko Nonaka² (1.MEIDEN NPI INC., 2.AIST)

Keywords:ALD, Purity ozone, Stress

With the increasing integration of semiconductor devices, the atomic layer deposition (ALD) method has been attracting attention in response to the precise film thickness control of metal oxide thin films and the demand for uniform film thickness for high aspects. We deposite an Al₂O₃ film on a Si wafer using ~ 100% concentration O₃ (Pure Ozone: PO) and trimethylaluminum (TMA), and evaluated the film stress. Since the Al2O3 film deposited by PO-ALD has tensile stress and is lower than other oxidized species, it is suggested that the oxidizing power has an influence on the Al₂O₃ film stress.