[23p-C301-1~9] 3.6 Laser processing (formerly 3.7)

[23p-C301-2] Local fluence dependence of femtosecond laser induced diffusion of Al into SiC

〇Yuji Kamei¹, Makoto Yamaguchi², Tatsuya Okada¹, Takuro Tomita¹ (1.Tokushima Univ., 2.Akita Univ.)

Keywords:femtosecond laser, silicon carbide

In this study, we investigated the AL diffusion into SiC depending on the irradiation local fluence of femtosecond laser. Aluminum (Al) and copper (Cu) were deposited on silicon carbide (SiC) substrates at 50 nm and 100 nm, respectively. A femtosecond laser beam was irradiated from the SiC side while the sample was scanned by a motorized stage with the focus set at the interface between Al and SiC. After that, when EDS analysis was performed on the cross-section of the irradiated area, and it was observed that Al diffused into SiC at a local fluence.