Oral presentation

7 Beam Technology and Nanofabrication » 7.2 Applications and technologies of electron beams

[26a-F308-1~8] 7.2 Applications and technologies of electron beams

Sat. Mar 26, 2022 9:00 AM - 11:15 AM F308 (F308)

Mitsunori Kitta(AIST), Takafumi Ishida(Nagoya University)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[26a-F308-1] Toward Operando Observation of All-Solid-State Li-Ion Battery by Scanning Transmission Electron Microscopy

〇(M2)Yuma Takagi¹, Kohei Aso¹, Hiroki Ito², Masaaki Hirayama², Ryoji Kanno², Yoshifumi Oshima¹ (1.JAIST, 2.Tokyo Tech Univ.)

9:15 AM - 9:30 AM

▼ [26a-F308-2] Cross-Sectional Transmission Electron Microscopy Observation of Li-C Nanocomposites Deposited onto Au Protrusions

〇WeiMing Lin¹, Shinsuke Ozeki¹, Kento Oyama¹, Tatsuya Akiyama², Takumi Yoshida¹, Yazid Yaakob³, Toru Asaka¹, Noriyuki Sonoyama¹, Masaki Tanemura¹ (1.Nagoya Inst. Tech., 2.F.C.C Co., Ltd, 3.Putra Malaysia Univ.)

9:30 AM - 9:45 AM

[26a-F308-3] Fabrication of Liquid Flow Nanocapusules for Transmission Electron Microscopy and In-Situ Observation of Water Freezing Process in Real Time

〇(M1)Tomoki Murakami¹, Naohito Satake¹, Hiroto Takahashi¹, Mitsuki Fujimoto¹, Xiaoguang Li², Masaki Takeguchi², Adarsh Sandhu¹ (1.UEC, 2.NIMS)

9:45 AM - 10:00 AM

[26a-F308-4] Construction of an Electron Beam Induced Deposition System Using a Tabletop Scanning Electron Microscope

〇Shunsuke Kobayashi¹ (1.JFCC)

10:15 AM - 10:30 AM

[26a-F308-5] Ultrafast pump-probe measurement of scanning electron microscopy by vertically illuminating configuration

〇Yuuga Emoto¹, Yuki Yamamoto¹, Yusuke Arashida¹, Keishi Akada¹, Shoji Yoshida¹, Jun-ichi Fujita¹ (1.Univ. of Tsukuba)

10:30 AM - 10:45 AM

[26a-F308-6] Lens properties of electron round lenses produced by light beams

〇Yuuki Uesugi^1,2, Yuichi Kozawa¹, Shunichi Sato¹ (1.Tohoku Univ., 2.PRESTO, JST)

10:45 AM - 11:00 AM

[26a-F308-7] Simulation of Field-Emission Property of Graphene-Insulator-Semiconductor Electron Source

〇Fujio Wakaya¹, Daichi Terakado¹, Satoshi Abo¹, Masayoshi Nagao², Katsuhisa Murakami² (1.Osaka Univ., 2.AIST)

11:00 AM - 11:15 AM

[26a-F308-8] Mechanism of highly monochromatic electron emission from a graphene/h-BN/n-Si stacked structure

〇Katsuhisa Murakami^1,2, Tomoya Igari^1,2, Masayoshi Nagao¹, Masahiro Sasaki², Yoichi Yamada² (1.AIST, 2.Univ. Tsukuba)

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