Oral presentation

[24p-E202-9~17] 10.3 Spin devices, magnetic memories and storages

Thu. Mar 24, 2022 4:00 PM - 6:30 PM E202 (E202)

Yoichi Shiota(Kyoto Univ.), Koyama Tomohiro(阪大)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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4:00 PM - 4:15 PM

▼ [24p-E202-9] First Principles Studies on the Effect of Grain Boundaries in MgO on Interfacial Perpendicular Magnetic Anisotropy Energy at Fe/MgO Interface in STT-MRAM

〇Keisuke Morishita¹, Yosuke Harashima², Masaaki Araidai^1,3, Tetsuo Endoh^4,5,6, Kenji Shiraishi^1,3,4 (1.Nagoya Univ., 2.NAIST, 3.IMass, 4.CIES, 5.Tohoku Univ., 6.RIEC)

4:15 PM - 4:30 PM

▼ [24p-E202-10] Field-free spin-orbit torque magnetization switching in a perpendicularly magnetized (Ga,Mn)As single layer

〇(P)Miao JIANG¹, Chenda Wang¹, Shinobu Ohya^1,2,3, Masaaki Tanaka^1,2 (1.EEIS, Univ. of Tokyo, 2.CSRN, Univ. of Tokyo, 3.IEI, Univ. of Tokyo)

4:30 PM - 4:45 PM

▼ [24p-E202-11] Nanosecond ultralow power spin orbit torque magnetization switching induced by BiSb topological insulator

〇(P)Nguyen HuynhDuy Khang¹, Takanori Shirokura¹, Tuo Fan¹, Mao Takahashi², Naoki Nakatani², Daisuke Kato², Yasuyoshi Miyamoto², Pham Nam Hai^1,3 (1.Tokyo Tech., 2.NHK, 3.Univ. Tokyo)

4:45 PM - 5:00 PM

△ [24p-E202-12] Current-induced domain wall motion in compensated ferrimagnetic GdFeCo films

〇Mio Ishibashi¹, Kay Yakushiji², Masashi Kawaguchi¹, Arata Tsukamoto³, Satoru Nakatsuji¹, Masamitsu Hayashi¹ (1.Univ. of Tokyo, 2.AIST, 3.Nihon University)

5:00 PM - 5:15 PM

▲ [24p-E202-13] Investigation of bit shift and write operation using spin orbit torque switching in racetrack memory

Masayuki Memita¹, 〇Yuichiro Kurokawa¹, Uraku Kamihoki¹, Masahiro Fujimoto¹, Hiromi Yuasa¹ (1.Kyushu Univ.)

5:30 PM - 5:45 PM

▲ [24p-E202-14] Voltage induced coercivity change in Pt/Co/amorphous TiO_x structure

〇Tomohiro Nozaki¹, Shingo Tamaru¹, Makoto Konoto¹, Takayuki Nozaki¹, Hitoshi Kubota¹, Akio Fukushima¹, Shinji Yuasa¹ (1.AIST)

5:45 PM - 6:00 PM

▲ [24p-E202-15] Modulation of dielectric constant and VCMA efficiency in FeB/MgO/HfO₂

〇(P)Hiroshige Onoda¹, Tomohiro Nozaki¹, Shingo Tamaru¹, Makoto Konoto¹, Takayuki Nozaki¹, Hitoshi Kubota¹, Akio Fukushima¹, Shinji Yuasa¹ (1.AIST)

6:00 PM - 6:15 PM

▲ [24p-E202-16] Evaluation of Device Size and Array Resistance Dependence in Read Disturbance Reduction Effect by Bi-directional Read SOT-MRAM

〇Yuwa Kishi¹, Akihiro Yamada¹, Mengnan Ke¹, Takayuki Kawahara¹ (1.Tokyo Univ. of Sci.)

6:15 PM - 6:30 PM

▲ [24p-E202-17] Magnetization Switching Behavior in Bi-directional Read of Spin Orbit Torque MRAM

〇Akihiro Yamada¹, Yuwa Kishi¹, Mengnan Ke¹, Takayuki Kawahara¹ (1.Tokyo Univ. of Sci.)

Oral presentation

[25a-E201-1~11] 10.3 Spin devices, magnetic memories and storages

Fri. Mar 25, 2022 9:00 AM - 12:00 PM E201 (E201)

Masuda Keisuke(物材機構), Shoya Sakamoto(Tokyo Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

9:00 AM - 9:15 AM

▲ [25a-E201-1] New physical origin of the temperature dependence of tunnel magnetoresistance: Crucial importance of interfacial s-d exchange interaction

〇Keisuke Masuda¹, Terumasa Tadano¹, Yoshio Miura¹ (1.NIMS)

9:15 AM - 9:30 AM

▲ [25a-E201-2] Giant tunnel magnetoresistance in Fe/Mg₄Al-O_x/Fe(001) magnetic tunnel junctions

Thomas Scheike¹, Zhenchao Wen¹, 〇Hiroaki Sukegawa¹, Seiji Mitani¹ (1.NIMS)

9:30 AM - 9:45 AM

▼ [25a-E201-3] Fcc(111) epitaxial magnetic tunnel junctions with a Co₉₀Fe₁₀/Mg-Al-O/Co₉₀Fe₁₀ structure

〇(D)Jieyuan Song^1,2, Thomas Scheike², Cong He², Zhenchao Wen², Hiroaki Sukegawa², Tadakatsu Ohkubo², Kazuhiro Hono^1,2, Seiji Mitani^1,2 (1.Univ. Tsukuba, 2.NIMS)

9:45 AM - 10:00 AM

▲ [25a-E201-4] The Importance of Interface in Controlling Mass Gapped Dirac Cone of Graphene Through Pseudospin via Magnetic Proximity Effect

〇(D)Yusuf Wicaksono¹, Halimah Harfah¹, Gagus K. Sunnardianto^2,4, Muhammad A. Majidi³, Koichi Kusakabe⁴ (1.Osaka Univ, 2.BRIN Indonesia, 3.Univ. Indonesia, 4.Hyogo Univ.)

10:00 AM - 10:15 AM

△ [25a-E201-5] Investigation for TMR properties of MTJs using FeAlSi epitaxial films

〇(DC)Shoma Akamatsu¹, Mikihiko Oogane¹, Masakiyo Tsunoda¹, Yasuo Ando¹ (1.Tohoku Univ.)

10:30 AM - 10:45 AM

△ [25a-E201-6] Development of an integrated wearable spin sensor pad

〇Ryota Nagira¹, Tomohiro Koyama^1,2, Daichi Chiba^1,2 (1.SANKEN., Osaka Univ., 2.CSRN., Osaka Univ.)

10:45 AM - 11:00 AM

▼ [25a-E201-7] Development of spintronics strain sensor using differential amplification

〇(M1)Ryo Genta¹, Kento Hasegawa^1,2, Tomohiro Koyama^1,3, Daichi Chiba^1,3 (1.SANKEN, Osaka Univ., 2.The Univ. of Tokyo, 3.CSRN, Osaka Univ.)

11:00 AM - 11:15 AM

▼ [25a-E201-8] Electric power free strain detection and nonvolatile information storage using nano-magnets

〇Taiga Torii¹, Hikaru Nomura^2,3, Tomohiro Koyama^1,3, Daichi Chiba^1,3 (1.SANKEN, Osaka Univ., 2.Eng. Sci., Osaka Univ., 3.CSRN, Osaka Univ.)

11:15 AM - 11:30 AM

[25a-E201-9] Echo State Property in Spin Torque Oscillator at Zero Temperature

〇Tomohiro Taniguchi¹, Yusuke Imai¹, Sumito Tsunegi¹, Kohei Nakajima² (1.AIST, 2.Univ. Tokyo)

11:30 AM - 11:45 AM

△ [25a-E201-10] Echo State Property in Spin Torque Oscillator at Finite Temperature

〇Yusuke Imai¹, Sumito Tsunegi¹, Kohei Nakajima², Tomohiro Taniguchi¹ (1.AIST, 2.Univ. Tokyo)

11:45 AM - 12:00 PM

△ [25a-E201-11] Broadband excitation of spin wave using microstrip line antennas for integrated magnonic devices

〇Kanta Mori¹, Taichi Goto¹, Watanabe Toshiaki², Takumi Koguchi¹, Yuichi Nakamura¹, Pang Boey Lim¹, Alexey Ustinov³, Mitsuteru Inoue^1,4 (1.Toyohashi Univ. of Tech., 2.Shin-Etsu Chemical Co., Ltd., 3.LETI, 4.RIEC, Tohoku Univ.)

Sessions

10 Spintronics and Magnetics » 10.3 Spin devices, magnetic memories and storages

[24p-E202-9~17] 10.3 Spin devices, magnetic memories and storages

▼ [24p-E202-9] First Principles Studies on the Effect of Grain Boundaries in MgO on Interfacial Perpendicular Magnetic Anisotropy Energy at Fe/MgO Interface in STT-MRAM

▼ [24p-E202-10] Field-free spin-orbit torque magnetization switching in a perpendicularly magnetized (Ga,Mn)As single layer

▼ [24p-E202-11] Nanosecond ultralow power spin orbit torque magnetization switching induced by BiSb topological insulator

△ [24p-E202-12] Current-induced domain wall motion in compensated ferrimagnetic GdFeCo films

▲ [24p-E202-13] Investigation of bit shift and write operation using spin orbit torque switching in racetrack memory

▲ [24p-E202-14] Voltage induced coercivity change in Pt/Co/amorphous TiO_x structure

▲ [24p-E202-15] Modulation of dielectric constant and VCMA efficiency in FeB/MgO/HfO₂

▲ [24p-E202-16] Evaluation of Device Size and Array Resistance Dependence in Read Disturbance Reduction Effect by Bi-directional Read SOT-MRAM

▲ [24p-E202-17] Magnetization Switching Behavior in Bi-directional Read of Spin Orbit Torque MRAM

[25a-E201-1~11] 10.3 Spin devices, magnetic memories and storages

▲ [25a-E201-1] New physical origin of the temperature dependence of tunnel magnetoresistance: Crucial importance of interfacial s-d exchange interaction

▲ [25a-E201-2] Giant tunnel magnetoresistance in Fe/Mg₄Al-O_x/Fe(001) magnetic tunnel junctions

▼ [25a-E201-3] Fcc(111) epitaxial magnetic tunnel junctions with a Co₉₀Fe₁₀/Mg-Al-O/Co₉₀Fe₁₀ structure

▲ [25a-E201-4] The Importance of Interface in Controlling Mass Gapped Dirac Cone of Graphene Through Pseudospin via Magnetic Proximity Effect

△ [25a-E201-5] Investigation for TMR properties of MTJs using FeAlSi epitaxial films

△ [25a-E201-6] Development of an integrated wearable spin sensor pad

▼ [25a-E201-7] Development of spintronics strain sensor using differential amplification

▼ [25a-E201-8] Electric power free strain detection and nonvolatile information storage using nano-magnets

[25a-E201-9] Echo State Property in Spin Torque Oscillator at Zero Temperature

△ [25a-E201-10] Echo State Property in Spin Torque Oscillator at Finite Temperature

△ [25a-E201-11] Broadband excitation of spin wave using microstrip line antennas for integrated magnonic devices

Authenticate

Sessions

10 Spintronics and Magnetics » 10.3 Spin devices, magnetic memories and storages

[24p-E202-9~17] 10.3 Spin devices, magnetic memories and storages

▼ [24p-E202-9] First Principles Studies on the Effect of Grain Boundaries in MgO on Interfacial Perpendicular Magnetic Anisotropy Energy at Fe/MgO Interface in STT-MRAM

▼ [24p-E202-10] Field-free spin-orbit torque magnetization switching in a perpendicularly magnetized (Ga,Mn)As single layer

▼ [24p-E202-11] Nanosecond ultralow power spin orbit torque magnetization switching induced by BiSb topological insulator

△ [24p-E202-12] Current-induced domain wall motion in compensated ferrimagnetic GdFeCo films

▲ [24p-E202-13] Investigation of bit shift and write operation using spin orbit torque switching in racetrack memory

▲ [24p-E202-14] Voltage induced coercivity change in Pt/Co/amorphous TiOx structure

▲ [24p-E202-15] Modulation of dielectric constant and VCMA efficiency in FeB/MgO/HfO2

▲ [24p-E202-16] Evaluation of Device Size and Array Resistance Dependence in Read Disturbance Reduction Effect by Bi-directional Read SOT-MRAM

▲ [24p-E202-17] Magnetization Switching Behavior in Bi-directional Read of Spin Orbit Torque MRAM

[25a-E201-1~11] 10.3 Spin devices, magnetic memories and storages

▲ [25a-E201-1] New physical origin of the temperature dependence of tunnel magnetoresistance: Crucial importance of interfacial s-d exchange interaction

▲ [25a-E201-2] Giant tunnel magnetoresistance in Fe/Mg4Al-Ox/Fe(001) magnetic tunnel junctions

▼ [25a-E201-3] Fcc(111) epitaxial magnetic tunnel junctions with a Co90Fe10/Mg-Al-O/Co90Fe10 structure

▲ [25a-E201-4] The Importance of Interface in Controlling Mass Gapped Dirac Cone of Graphene Through Pseudospin via Magnetic Proximity Effect

△ [25a-E201-5] Investigation for TMR properties of MTJs using FeAlSi epitaxial films

△ [25a-E201-6] Development of an integrated wearable spin sensor pad

▼ [25a-E201-7] Development of spintronics strain sensor using differential amplification

▼ [25a-E201-8] Electric power free strain detection and nonvolatile information storage using nano-magnets

[25a-E201-9] Echo State Property in Spin Torque Oscillator at Zero Temperature

△ [25a-E201-10] Echo State Property in Spin Torque Oscillator at Finite Temperature

△ [25a-E201-11] Broadband excitation of spin wave using microstrip line antennas for integrated magnonic devices

Authenticate

▲ [24p-E202-14] Voltage induced coercivity change in Pt/Co/amorphous TiO_x structure

▲ [24p-E202-15] Modulation of dielectric constant and VCMA efficiency in FeB/MgO/HfO₂

▲ [25a-E201-2] Giant tunnel magnetoresistance in Fe/Mg₄Al-O_x/Fe(001) magnetic tunnel junctions

▼ [25a-E201-3] Fcc(111) epitaxial magnetic tunnel junctions with a Co₉₀Fe₁₀/Mg-Al-O/Co₉₀Fe₁₀ structure