〇Satoshi Akutsu¹, Kazuyuki Ito¹, Takuo Kikuchi¹, Nobuaki Makino¹, Yoshiyuki Kitahara¹, Tatsuya Ohguro², Yoshihiko Fuji², Mari Takahashi², Yukiko Kashiura² (1.Toshiba Co., 2.TDSC Co)

Sessions

13 Semiconductors » 13.3 Insulator technology

[25p-P05-1~2] 13.3 Insulator technology

[25p-P05-1] Determination of the charge centroids of electrons and holes trapped in the charge trap layer of MONOS-type nonvolatile memory elements (II)

[25p-P05-2] Dependence of activation energy for mobility of ions in Si₃N₄ and SiO₂ films on ion radius

[26a-E103-1~9] 13.3 Insulator technology

[26a-E103-1] Investigation of PMA metal species effective for improving GeO₂film quality and
GeO₂/Ge interface properties

[26a-E103-2] Study of water resistance of GeO2 films

[26a-E103-3] Study of Introduction of Post Metallization Annealing at the GeO2/Ge Interface

[26a-E103-4] Investigation of Low Temperature Oxidation of Si Substrates Using Chemical Solutions

[26a-E103-5] Analysis of the energy depth of electron trap centers in silicon nitride films

[26a-E103-6] Influence of sputtering gas pressure, Ar/N₂ flow ratio and Si addition on film properties of silicon nitride

[26a-E103-7] Thin Film Metrology for Semiconductor Process Technology 1

[26a-E103-8] Thin film metrology for semiconductor process technology 2

[26a-E103-9] Relationship between film thickness and lifetime of insulating films deposited by chemical vapor deposition

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