[22a-E105-1~7] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[22a-E105-4] Residue-free large-area graphene transfer for understanding FLP mechanism at metal/Si interface

〇Tomonori Nishimura¹, Ryuichi Nakajima¹, Yih-Ren Chang¹, Haruki Uchiyama¹, Kosuke Nagashio¹ (1.The Univ. of Tokyo)

Keywords:Fermi level pinning, Silicon