[22a-E105-1~7] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

△ [22a-E105-3] Fabrication of Si oxide film using extremely diluted HF solution

〇(B)Taiki Arai¹, Rintaro Kudo¹, Toshiaki Suzuki¹, Akitaka Yoshigoe², Masaaki Niwa¹, Mitsuya Motohashi¹ (1.Tokyo Denki Univ., 2.JAEA Materials Sciences Research Center)

Keywords:Si oxide film, anodization, Si-O bond

Silicon oxide films were prepared on a p-type and an n-type Si substrates by anodyzation. Extremly dilute HF solution was used for anodyzation. The atomic bonding configuration of the film was discussed by XPS. The Si 2p spectrum of the film surface is shifted to higher energy in comparison with one of natural oxide surface. In addition, the depth profile of the film was discussed by XPS spectra. It was found that the atomic bonding configuration of the film was changed in the depth direction.