[22a-E202-1~7] 15.4 III-V-group nitride crystals

△ [22a-E202-1] Modification of thermodynamic analysis model for HVPE growth of GaN at high temperatures

〇(M2)Satoshi Matsuoka¹, Momoko Bando¹, Kazuki Ohnishi², Ken Goto¹, Shugo Nitta³, Hisashi Murakami¹, Yoshinao Kumagai¹ (1.Dept. of Appl. Chem., Tokyo Univ. of Agri. & Tech., 2.Dept. of Electronics, Nagoya Univ., 3.IMaSS, Nagoya Univ.)

Keywords:GaN, HVPE, thermodynamic analysis

The thermodynamic analysis of HVPE growth of GaN was conducted using a modified model applied to the growth at high temperatures. The conventional model reported in the past can also describe the experimental behavior around 1000℃, however, due to the recent increase in growth temperature, the model can’t explain the experimental results that doesn’t occur in the temperature range higher than 1100℃, and the substrate decomposes. Therefore, we establish a modified thermodynamic analysis model that incorporates the reaction between GaN and H₂ at high temperatures. The details will be reported on the presentation.