[22a-E202-1~7] 15.4 III-V-group nitride crystals

[22a-E202-2] Fabrication of semi-polar {20-21} GaN substrate by hydride vapor phase epitaxy and investigation of stress and polarization characteristics

〇Shunsuke Tanigawa¹, Ryusei Misaku¹, Narihito Okada¹, Jie Song², Jung Han², Satoshi Kurai¹, Yoichi Yamada¹, Kazuyuki Tadatomo¹ (1.Yamaguchi Univ., 2.Yale Univ.)

Keywords:semiplar, hydride vapor phase epitaxy, stress