The 69th JSAP Spring Meeting 2022

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[22a-E202-1~7] 15.4 III-V-group nitride crystals

Tue. Mar 22, 2022 10:00 AM - 12:00 PM E202 (E202)

Hisashi Murakami(TUAT), Tomoyuki Tanikawa(Osaka Univ.)

11:15 AM - 11:30 AM

[22a-E202-5] Growth of GaN films on ScAlMgO4 Substrate by HVPE (1) Simultaneous growth of multiple Substrates

〇Kazuyuki Tadatomo1, Tuguo Fukuda3, Ryo Inomoto1, Shinichi Seiryu2 (1.Creators of New Value, 2.OTASJAPAN, 3.Fukuda Crystal)

Keywords:HVPE, GaN, SAM

Thick GaN films were grown in a large 6-inch HVPE furnace with five SAM substrates arranged to simulate a large area of 6-inch diameter. Five transparent GaN substrates were obtained and all 5 SAM substrates were spontaneously separated. 4 of the SAM substrates were recovered without cracking and could be reused by CMP. The area of the five substrates was pseudo-similar to a large area of 6 inches in diameter, demonstrating that the SAM substrate is a promising substrate for realizing long-diameter GaN growth with high yields in the future.