[22a-E204-1~9] 6.3 Oxide electronics

△ [22a-E204-6] Device-direction dependent phase transition property in VO₂ thin films on TiO₂(110) STEP substrates

〇Kyungmin Kim¹, Shingo Genchi², Shiro Yamazaki³, Hidekazu Tanaka², Masayuki Abe¹ (1.Osaka Univ. Engineering Science, 2.Osaka Univ. SANKEN, 3.Tokyo Tech.)

Keywords:VO2:Vanadium dioxide/TiO2:Titanium dioxide, step-terrace structures, metal-insulator transition property

Vanadium dioxide (VO₂) exhibits metal-insulator transition (MIT) near room temperature accompanied with a resistance change of 3 orders of magnitude. MIT property has been tuned by W-doping, fabrication of nanowires, etc. In addition to these methods, use of step-terrace(s-t) structures could be a promising candidate to control the MIT property since VO₂ is sensitive to the lattice strain at the interface between thin films and substrates. In this study, we grew VO₂ thin films on TiO₂ in-plane orientation controlled step substrates and investigated the step direction dependence of the MIT property by fabrication of microwires, and found that the steepness of resistivity change is controlled by using s-t structures. Our results show that use of VO₂ thin films with s-t structures is a promising method to control MIT property by changing the direction of the devices.