[22a-E302-1~12] 13.7 Compound and power devices, process technology and characterization

△ [22a-E302-11] The increase of heat resistivity of N-polar GaN/AlGaN heterostructure transferred on Si substrate with AlN anti-diffusion layer inserted to interface of direct bonding

〇Yuki Yoshiya¹, Takuya Hoshi¹, Hiroki Sugiyama¹, Fumito Nakajima¹, Hideaki Matsuzaki¹ (1.NTT Device Technology Labs)

Keywords:Galium nitride, N-polar, epitaxial-layer transfer