The 69th JSAP Spring Meeting 2022

Presentation information

Oral presentation

13 Semiconductors » 13.8 Optical properties and light-emitting devices

[22p-D316-1~16] 13.8 Optical properties and light-emitting devices

Tue. Mar 22, 2022 1:00 PM - 5:15 PM D316 (D316)

Yasushi Nanai(National Defense Academy), Jun Tatebayashi(Osaka Univ.)

4:15 PM - 4:30 PM

[22p-D316-13] Design of quantum cascade lasers with high aluminum composition InAlAs barriers and high indium composition InGaAs wells by non-equilibrium Green's function method

〇(PC)Hirotaka Tanimura1, Shigeyuki Takagi1, Tsutomu Kakuno2, Rei Hashimoto2, Kei Kaneko2, Shinji Saito2 (1.Tokyo Univ. of Tech., 2.Toshiba)

Keywords:quantum cascade laser, non-equilibrium Green's function method

As the active layer of a high-power QCL, a film structure with a high-aluminum composition InAlAs barrier and a high-indium composition InGaAs well (AlAs+InAs) was investigated. In AlAs+InAs, AlAs was inserted into the barrier of the injection region of the reference structure and InAs was inserted into the well of the active region. The non-equilibrium Green's function simulation results show that the gain of AlAs+InAs is about 1.24 times higher than that of the reference structure.