Oral presentation

[22a-D316-1~7] 13.8 Optical properties and light-emitting devices

Tue. Mar 22, 2022 9:30 AM - 11:15 AM D316 (D316)

Jumpei Ueda(Kyoto Univ.), Takayuki Nakanishi(NIMS)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:30 AM - 9:45 AM

[22a-D316-1] Photoluminescence properties of doped β-FeSi₂ films

〇Kensuke Akiyama^1,2, Hiroshi Funakubo² (1.Kanagawa Inst. Ind. Sci. Tec., 2.Tokyo Inst. Tec.)

9:45 AM - 10:00 AM

[22a-D316-2] Carrier-confinement effects on the electroluminescence of Sr_0.998Pr_0.002Ti_0.9Al_0.1O_3-_d thin film

〇Toru Kyomen¹, Kentaro Okusa¹, Eri Yokozuka¹, Hiroshi Takashima² (1.Gunma Univ., 2.AIST)

10:00 AM - 10:15 AM

[22a-D316-3] Study of dispersed inorganic EL devices using ZnS:Cu nanophosphors
-Improvement of emission characteristics -by adding Cu_xS nanoparticles -

〇Rei Matsukuma¹, Shuma Bando¹, Yoshinobu Shikata¹, Ohmi Koutoku¹ (1.Tottori Univ.)

10:15 AM - 10:30 AM

[22a-D316-4] Evaluation of the relationship between the surface roughness of the substrate and the EL characteristics in the top-emission type powder EL

〇Rikuya Watanabe¹, Kosuke Takahashi², Kojiro Uetani², Shota Tsuneyasu³, Toshifumi Satoh¹ (1.Tokyo Polytechnic Univ., 2.Osaka Univ., 3.National Institute of Technology, Oita College.)

10:30 AM - 10:45 AM

[22a-D316-5] [Highlight]Synthesis of Halide Phosphor Materials Using the WASSR Method

〇Kenji Toda¹ (1.Niigata Univ.)

10:45 AM - 11:00 AM

[22a-D316-6] Characterization of defect-related luminescence in CaS:Eu²⁺, Tm³⁺ and red afterglow

〇Yoriko Suda^1,2, Yuki Tamura², Syota Yamaguchi², Yasushi Nanai³, Tsuyoshi Okuno² (1.Tokyo Univ. Tech., 2.The Univ. of Electro Communications, 3.National Defense Academy)

11:00 AM - 11:15 AM

[22a-D316-7] Up-conversion properties of La₂ZnTiO₆: Nd³⁺, Yb³⁺, Ho³⁺ by near-infrared light excitention

〇Mari Yasuoka¹, Hiroaki Samata¹ (1.Kobe Univ.)

Oral presentation

[22p-D316-1~16] 13.8 Optical properties and light-emitting devices

Tue. Mar 22, 2022 1:00 PM - 5:15 PM D316 (D316)

Yasushi Nanai(National Defense Academy), Jun Tatebayashi(Osaka Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:00 PM - 1:15 PM

[22p-D316-1] Exploration of silicate-based phosphors by crystal-site engineering

〇Yasushi Sato¹, Koji Tomita², Masato Kakihana^3,4 (1.Okayama Univ. Sci., 2.Tokai Univ., 3.Osaka Univ., 4.Tohoku Univ.)

1:15 PM - 1:30 PM

[22p-D316-2] Machine Learning on Emission Peak Top of Eu²⁺-Activated Phosphors

〇Yukinori Koyama¹, Takashi Takeda¹, Naoto Hirosaki¹ (1.NIMS)

1:30 PM - 1:45 PM

△ [22p-D316-3] Search for Narrow-Band Phosphors Using Local Structure Similarity

〇Shota Takemura¹, Yukinori Koyama¹, Takayuki Nakanishi¹, Shiro Funahashi¹, Naoto Hirosaki¹, Hidekazu Ikeno², Takashi Takeda¹ (1.NIMS, 2.Osaka Pref. Univ.)

1:45 PM - 2:00 PM

▲ [22p-D316-4] Revisiting the Eu2+ emission in CaAlSiN3 (CASN) red phosphor by time-resolved spectroscopy

〇Jian Xu¹, Kohsei Takahashi¹, Takayuki Nakanishi¹, Naoto Hirosaki¹, Takashi Takeda¹ (1.NIMS)

2:00 PM - 2:15 PM

[22p-D316-5] Deep-Red to Near-Infrared Luminescence from Eu²⁺-Trapped Exciton State in YSiO₂N

〇Yuuki Kitagawa¹, Jumpei Ueda¹, Jian Xu², Takayuki Nakanishi², Takashi Takeda², Naoto Hirosaki², Setsuhisa Tanabe¹ (1.Kyoto Univ., 2.NIMS)

2:15 PM - 2:30 PM

△ [22p-D316-6] Model of persistent photoreduction via charge compensation defect in KSrPO₄:Eu

〇Masaya Tsuta^1,2, Susumu Nakamura², Ariyuki Kato¹ (1.NUT Univ., 2.NNCT)

2:30 PM - 2:45 PM

△ [22p-D316-7] The influence of Eu³⁺ site distribution for photoluminescence properties in Sr₂CaWO₆:Eu³⁺

〇(DC)Takahito Otsuka¹, Tomokatsu Hayakawa^1,2 (1.Nagoya Inst. Tech., 2.FRIMS)

3:00 PM - 3:15 PM

[22p-D316-8] [The 51st Young Scientist Presentation Award Speech] Demonstration of light-emitting diodes with ultra-stable emission wavelength using Tb-doped Al_xGa_1-xN

〇Ryota Komai¹, Shuhei Ichikawa^1,2, Hiromasa Hanzawa³, Jun Tatebayashi¹, Yasufumi Fujiwara¹ (1.Graduate School of Engineering, Osaka Univ., 2.Research Center for UHVEM, Osaka Univ., 3.Graduate School of Engineering Science, Osaka Univ.)

3:15 PM - 3:30 PM

▼ [22p-D316-9] Investigation of an additional point-like short-wavelength emission in InGaN red light-emitting diodes

〇(DC)Pavel Sergeyevich Kirilenko¹, Zhe Zhuang¹, Daisuke Iida¹, Martin Velazquez-Rizo¹, Kazuhiro Ohkawa¹ (1.King Abdullah Univ. of Science and Technology)

3:30 PM - 3:45 PM

▼ [22p-D316-10] Photoluminescence enhancement of InAs surface quantum dots by Al₂O₃ passivation

〇(DC)Hanif Mohammadi¹, Ronel Roca¹, Yuwei Zhang¹, Hyunju Lee¹, Naotaka Iwata¹, Yoshio Ohshita¹, Itaru Kamiya¹ (1.Toyota tech. inst.)

3:45 PM - 4:00 PM

[22p-D316-11] Investigation of device structure for the high power surface emitting quantum cascade laser

〇Rei Hashimoto¹, Tsutomu Kakuno¹, Kei Kaneko¹, Shinji Saito¹, Hirotaka Tanimura², Shigeyuki Takagi², Yunzhao Yao³, Naoki Ikeda³, Yoshimasa Sugimoto³, Takaaki Mano³, Takashi Kuroda³, Kazuaki Sakoda³ (1.Toshiba CMC, 2.Tokyo Technology Univ., 3.NIMS)

4:00 PM - 4:15 PM

[22p-D316-12] Operating characteristics for photonic crystal surface-emitting quantum cascade lasers with low symmetric pillar

〇Shinji Saito¹, Kei Kaneko¹, Rei Hashimoto¹, Tsutomu Kakuno¹, Hirotaka Tanimura², Shigeyuki takagi², Yuanzhao Yao³, Naoki Ikeda³, Yoshimasa Sugimoto³, Takaaki Mano³, Takashi Kuroda³, Kazuaki Sakoda³ (1.Toshiba Corp., 2.Tokyo Inst. Univ., 3.NIMS)

4:15 PM - 4:30 PM

[22p-D316-13] Design of quantum cascade lasers with high aluminum composition InAlAs barriers and high indium composition InGaAs wells by non-equilibrium Green's function method

〇(PC)Hirotaka Tanimura¹, Shigeyuki Takagi¹, Tsutomu Kakuno², Rei Hashimoto², Kei Kaneko², Shinji Saito² (1.Tokyo Univ. of Tech., 2.Toshiba)

4:30 PM - 4:45 PM

[22p-D316-14] Effect of Phosphorus Composition of barrier layers on Carrier Transport Properties in InGaAs/GaAsP Super Lattice Structures

〇Tetsuo Ikari¹, Ryo Furukawa¹, Naoki Yamamoto¹, Masakazu Sugiyama², Atsuhiko Fukuyama¹ (1.Univ. Miyazaki, 2.The Univ. Tokyo)

4:45 PM - 5:00 PM

[22p-D316-15] First-principles study on the stability of mixed halide perovskites CsPb(I_xBr_1-x)₃

〇(M1)Ami Tomita¹, Takashi Nakayama¹ (1.Chiba Univ.)

5:00 PM - 5:15 PM

[22p-D316-16] Room-temperature polariton formation and photoluminescence relaxation dynamics in a microcavity containing CdSe nanoplatelets

〇Masaru Oda¹, Hiroki Matsuo¹, Katsunosuke Nakaishi¹, Kazuaki Yamato¹, Hisao Kondo² (1.Kyushu inst. of tech., 2.Ehime Univ.)

Poster presentation

[23a-P02-1~14] 13.8 Optical properties and light-emitting devices

Wed. Mar 23, 2022 9:30 AM - 11:30 AM P02 (Poster)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:30 AM - 11:30 AM

[23a-P02-1] Upconversion luminescence and temperature sensitivity of LaOF : Yb, Ho phosphor

〇Toshihiro Nonaka¹, Toko Sugiura¹, Takehiko Tsukamoto¹, Shin-Ichi Yamamoto² (1.NIT Toyota College, 2.Ryukoku Univ.)

9:30 AM - 11:30 AM

[23a-P02-2] Optical property and crystal structure of LaF₃ : Yb, Ho phosphor

〇Toshihiro Nonaka¹, Shota Amano¹, Soichiro kato¹, Toko Sugiura¹, Takehiko Tsukamoto¹, Shin-Ichi Yamamoto² (1.NIT Toyota College, 2.Ryukoku Univ.)

9:30 AM - 11:30 AM

[23a-P02-3] Luminescence of Cs₃Cu₂I₅

〇(M1)Tomoki Nishihara¹, Tsuyoshi Okuno¹ (1.UEC)

9:30 AM - 11:30 AM

[23a-P02-4] Luminescence characteristics in CaS:Eu²⁺, Mn²⁺ red afterglow phosphor

〇Kazuaki Iguchi¹, Okuno Tsuyoshi¹, Tamura Yuki¹, Yamaguchi Syota¹ (1.The Univ. of Electro-Communications)

9:30 AM - 11:30 AM

[23a-P02-5] Near-Infrared Wideband Luminescence of Cr-doped Sb₂O₃-ZnO-GeO₂ Glass Phosphors

〇Yasushi Nanai¹ (1.National Defense Academy)

9:30 AM - 11:30 AM

[23a-P02-6] Relationship between luminescence properties and film thickness of ZnS:Mn thin films prepared by electron beam deposition

〇(B)Hayato Ikeda¹, Kitawaki Taisei¹, Wani Koichi¹, Yamamoto Shin-ichi¹ (1.Ryukoku Univ.)

9:30 AM - 11:30 AM

[23a-P02-7] Bandgap engineering of Pr³⁺-activated CaHfO₃-CaTaO₂N perovskite solid solution and their photoluminescence properties

〇Yasushi Sato¹, Rie Yanamoto¹, Masato Kakihana^2,3 (1.Okayama Univ. Sci., 2.Osaka Univ., 3.Tohoku Univ.)

9:30 AM - 11:30 AM

[23a-P02-8] Solution-processed VCSELs using CdSe/ZnS core-shell colloidal quantum dots (2)

Nobuki Niboshi¹, Takuro Michishima¹, Masahiro Okamoto², Hiromitsu Kiriyama², 〇Naoki Ohtani¹ (1.Doshisha Univ., 2.QST KPSI)

9:30 AM - 11:30 AM

[23a-P02-9] Characterization of AC type TDEL devices by low voltage using BaTiO₃

〇(M1)Taisei Kitawaki¹, Koichi Wani¹, Takahito Imai¹, shin-ichi Yamamoto¹ (1.Ryukoku Univ.)

9:30 AM - 11:30 AM

[23a-P02-10] Evaluation of Inductor Shape on Inorganic EL Driven by Wireless Power Transmission

〇Daiki Sato¹, Taisei Kitawaki¹, Koichi Wani¹, Shin-ichi Yamamoto¹ (1.Ryukoku Univ.)

9:30 AM - 11:30 AM

[23a-P02-11] Characterization of Distributed-Type Inorganic EL device for Two-Sided Emission

〇Shuhei Tokura¹, Daiki Satou¹, Taisei Kitawaki¹, Kouichi Wani¹, Shin-ichi Yamamoto¹ (1.Ryukoku Univ.)

9:30 AM - 11:30 AM

[23a-P02-12] Optical and electronic properties of Al_1-xSc_xN by using first-principles calculations

〇Shoya Kawano¹, Kenji Hirata², Kazuma Nakamura¹ (1.Kyushu Inst. Tech., 2.AIST)

9:30 AM - 11:30 AM

[23a-P02-13] Optical property and photoexcited carrier dynamics of PbS-X (X=I, Br) quantum dots film

〇Yuto Kawata¹, Naoki Oguri¹, Dong Liu¹, Chao Ding¹, Taro Toyoda¹, Syuji Hayase¹, Qing Shen¹ (1.The Univ. Electro-Commun.)

9:30 AM - 11:30 AM

[23a-P02-14] Synthesis and Optical Property of Inorganic Lead Halide Perovskite Quantum Dots

〇Akihito Fuchimoto¹, Chao Ding¹, Hua Li¹, Shota Yajima¹, Taro Toyoda¹, Shuji Hayase¹, Taizo Masuda^1,2, Qing Shen¹ (1.Univ. of Electro-Commun., 2.Toyota Motor Corp.)

Sessions

13 Semiconductors » 13.8 Optical properties and light-emitting devices

[22a-D316-1~7] 13.8 Optical properties and light-emitting devices

[22p-D316-1~16] 13.8 Optical properties and light-emitting devices

△ [22p-D316-3] Search for Narrow-Band Phosphors Using Local Structure Similarity

▲ [22p-D316-4] Revisiting the Eu2+ emission in CaAlSiN3 (CASN) red phosphor by time-resolved spectroscopy

△ [22p-D316-6] Model of persistent photoreduction via charge compensation defect in KSrPO4:Eu

△ [22p-D316-7] The influence of Eu3+ site distribution for photoluminescence properties in Sr2CaWO6:Eu3+

▼ [22p-D316-9] Investigation of an additional point-like short-wavelength emission in InGaN red light-emitting diodes

▼ [22p-D316-10] Photoluminescence enhancement of InAs surface quantum dots by Al2O3 passivation

[23a-P02-1~14] 13.8 Optical properties and light-emitting devices

Authenticate

△ [22p-D316-6] Model of persistent photoreduction via charge compensation defect in KSrPO₄:Eu

△ [22p-D316-7] The influence of Eu³⁺ site distribution for photoluminescence properties in Sr₂CaWO₆:Eu³⁺

▼ [22p-D316-10] Photoluminescence enhancement of InAs surface quantum dots by Al₂O₃ passivation