[22p-D316-1~16] 13.8 Optical properties and light-emitting devices

[22p-D316-8] [The 51st Young Scientist Presentation Award Speech] Demonstration of light-emitting diodes with ultra-stable emission wavelength using Tb-doped Al_xGa_1-xN

〇Ryota Komai¹, Shuhei Ichikawa^1,2, Hiromasa Hanzawa³, Jun Tatebayashi¹, Yasufumi Fujiwara¹ (1.Graduate School of Engineering, Osaka Univ., 2.Research Center for UHVEM, Osaka Univ., 3.Graduate School of Engineering Science, Osaka Univ.)

Keywords:rare-earth, semiconductor, EL

Currently, green light emitting diodes (LEDs) are typically based on In_xGa_1-xN-related materials. However, the emission wavelength of In_xGa_1-xN-related LED can easily shift during the LED operation due to temperature changes and current injection levels. On the other hand, Tb³⁺ ions doped in active layers in III-nitride based LEDs show narrow emission linewidths and wavelength-stable emission originating from the intra-4f shell transitions of Tb³⁺ ions under current injection. In this study, we demonstrate LEDs with ultra-stable emission wavelength using Al_xGa_1-xN:Tb layer as the active layer.