[22p-E204-1~13] 6.3 酸化物エレクトロニクス

▼ [22p-E204-10] Investigation of Deep-level Defects in β-Ga₂O₃ (001) Schottky Barrier Diode
by Transient Photocapacitance Spectroscopy

〇(D)Fenfen Fenda Florena¹、Aboulaye Traore¹、Takeaki Sakurai¹ (1.Univ. of Tsukuba)

キーワード：gallium oxide, wide band gap materials, deep-levels

β-Ga₂O₃ is an emerging ultrawide semiconductor for high-power applications due to its outstanding intrinsic properties. Indeed, β-Ga₂O₃ has a large bandgap (4.5−4.8 eV), high breakdown field (~8 MV/cm), and high Baliga’s figure of merit (BFOM) (3000). BFOM describes a trade-off relationship between breakdown voltage and on-resistance. At this early stage of development, the investigation of deep levels in β-Ga₂O₃ and their effects on the device’s electrical properties are crucial for the achievement of high-performance devices. Among optical spectroscopy techniques, transient photocapacitance (TPC) spectroscopy is one of the most effective methods of revealing deep-level defects in materials because of the very low detection limit. In this work, deep-level defects within β-Ga₂O₃ detected by TPC spectroscopy were reported. The spectral dependence of the optical cross-section of photoionized deep level defects was measured and fitted by several models.