[22p-E204-1~13] 6.3 Oxide electronics

△ [22p-E204-12] In-situ TEM Observation of Resistive Switching Region in TiO_2-x Planar Memristor

〇(M2)Nao Taniguchi¹, Yusuke Hayashi¹, Tetsuya Tohei¹, Akira Sakai¹ (1.Osaka Univ.)

Keywords:in-situ TEM, memristor, oxygen vacancy

TiO_2-x is a memristor material that has been reported to exhibit resistance change due to drift of oxygen vacancies. In this study, we performed in situ TEM (transmission electron microscopy) analysis under bias voltage to elucidate the dynamic formation mechanism of the shear plane structure, which is formed by the accumulation of oxygen vacancies and contributes to the resistance change. Planar micro memristor devices were fabricated using electron beam lithography and focused ion beam, and in-situ TEM observation under bias voltage was performed. As a result, the formation and disappearance processes of the shear plane synchronized with the resistance change were successfully observed at the nanoscale.