[22p-E302-1~15] CS.9 Code-sharing Session of 13.7 & 15.6

[22p-E302-1] [The 12th Compound Semiconductor Electronics Achievement Award Speech] Progress and Future Prospects of SiC Power Semiconductor

〇Tsunenobu Kimoto¹ (1.Kyoto Univ.)

Keywords:SiC, power device

SiC power MOSFETs and Schottky barrier diodes have been commercialized, demonstrating substantial energy saving in various electric systems. In this presentation, a brief history and recent progress of SiC power semiconductor (both material and devices) are reviewed. Future prospects and unresolved issues are also described.