[The 43rd Best Review Paper Award Speech] Recent development of vertical GaN power devices

Tohru Oka

Presentation information

Oral presentation

CS Code-sharing session » 【CS.9】 Code-sharing Session of 13.7 & 15.6

[22p-E302-1~15] CS.9 Code-sharing Session of 13.7 & 15.6

Tue. Mar 22, 2022 1:45 PM - 6:30 PM E302 (E302)

Yasunori Tanaka(AIST), Manabu Arai(Nagoya Univ.)

2:15 PM - 2:45 PM

[22p-E302-2] [The 43rd Best Review Paper Award Speech] Recent development of vertical GaN power devices

〇Tohru Oka^1,2 (1.Toyoda Gosei, 2.Nagoya Univ.)

Keywords:GaN, power device

This presentation reviews current status of vertical GaN power devices on GaN substrates, including our developed Schottky barrier diode (SBD) / trench MOSFET technology and examples of their circuit applications. Key remaining issues for the practical applications are also described.