[22p-E302-1~15] CS.9 Code-sharing Session of 13.7 & 15.6

△ [22p-E302-15] Development of new equivalent circuit model of SBD-embedded SiC MOSFETs and improvement of clamping capability of parasitic PN diode

〇Teruyuki Ohashi¹, Hiroshi Kono², Souzou Kanie², Takahiro Ogata², Kenya Sano², Hideki Hayakawa², Shunsuke Asaba¹, Shigeto Fukatsu¹, Ryosuke Iijima¹ (1.Corporate R&D Center, Toshiba Corp., 2.Toshiba Electronic Devices & Storage Corporation)

Keywords:Semiconductor, SiC, MOSFET

In SiC MOSFETs, since the operation of parasitic PN diodes causes a decrease in device reliability, we are developing SBD-embedded SiC MOSFETs. In this study, we have developed a new equivalent circuit model that accurately and simply represents the maximum current density at which the parasitic PN diodes does not operate (J_umax). We have constructed the device design guidelines based on this equivalent circuit model, and fabricated devices based on these guidelines. As a result, we have succeeded to improve J_umax by 4.8 times compared to the conventional design. This significant improvement in J_umax is a promising result for future application of the SBD-embedded SiC MOSFETs above 200℃.