[22p-E302-1~15] CS.9 Code-sharing Session of 13.7 & 15.6

[22p-E302-7] Normally-off β-Ga₂O₃ MOSFET with a Nitrogen-ion implanted channel layer
having a maximum field effect mobility of 52 cm²/Vs

〇Hironobu Miyamoto¹, Yuki Koishikawa¹, Daiki Wakimoto¹, Kohei Sasaki¹, Akito Kuramata¹ (1.NCT)

Keywords:Ga2O3, Transistor, Mobility

Inversion-type Ga₂O₃ MOSFET with Nitrogen doped-channel layer formed by ions implantation was developed. The device demonstrated high threshold voltage of +6.2 V and high channel mobility of 52 cm2/Vs.