[22p-E302-1~15] CS.9 Code-sharing Session of 13.7 & 15.6

[22p-E302-6] 2 A, 1.2 kV breakdown voltage β-Ga₂O₃ FP(field-plated) MOSSBD

〇Fumio Otsuka¹, Hironobu Miyamoto¹, Akio Takatsuka¹, Shinji Kunori¹, Kohei Sasaki¹, Akito Kuramata¹ (1.NCT)

Keywords:Schottky barrier diode, trench MOS, on/off ratio

Beta gallium oxide (β-Ga2O3) has become of interest for the next generation power device with high power and low loss owing to its outstanding physical properties in material and the high productivity of the substrate. Among the candidates of the device structures, MOS-type Schottky barrier diode (MOSSBD) is promising for the next generation high-power and low-loss device because it was reported to exhibit a breakdown voltage higher than 1.2 kV and a specific on-resistance lower than 20 mΩ cm2. In this presentation, we will report the device characteristics of the MOSSBD with the dimension of 1.7mm in square possible of actual circuit evaluation, which was fabricated for the purpose of its realization.