[22p-E302-1~15] CS.9 Code-sharing Session of 13.7 & 15.6

▼ [22p-E302-5] Vertical Trench Field Plated Ga2O3 Schottky Barrier Diodes

〇Sandeep Kumar¹, Hisashi Murakami², Yoshinao Kumagai², Masataka Higashiwaki¹ (1.National Institute of Information and Communications Technology, 2.Tokyo University of Agriculture and Technology)

Keywords:Ga2O3, Power electronics, Wide-bandgap

Development to enhance breakdown voltage of Ga₂O₃ transistors and diodes have been actively pursued in the last decade. In this work, Ga₂O₃ SBDs with novel edge termination structures were designed, fabricated, and characterized to understand electric field management for further enhancing the V_br with keeping a low R_on.