[22p-E302-1~15] CS.9 Code-sharing Session of 13.7 & 15.6

[22p-E302-4] β-Ga₂O₃ Heterojunction Barrier Schottky Diodes with Breakdown Voltage of Over 1200 V

〇Akio Takatsuka¹, Hironobu Miyamoto¹, Kohei Sasaki¹, Akito Kuramata¹ (1.Novel Crystal Technology, Inc.)

Keywords:Semiconductor, Gallium Oxide, Schottky Barrier Diode

We developed β-type gallium oxide heterojunction barrier Schottky (JBS) diodes with hetero-pn junction. For the production, at first, micro-sized trench structures were formed on a gallium oxide epitaxial wafer. Next, Cu₂O was formed only inside the trench structures, forming hetero-pn junction. After that, a Pt Schottky electrode was formed on the surface of the wafer and an ohmic electrode was formed on the backside of the wafer by Ti. In electrical measurement, a breakdown voltage of over 1200 V was confirmed with low leakage current smaller than 1 × 10^-3 A / cm^-3 for the first time.