[23a-E101-1~11] 17.3 Layered materials

[23a-E101-2] Fabrication Process for Nanoscale Monolayer WTe₂ Devices

〇Masayuki Hosoda^1,2, Russell S. Deacon¹, Michael D. Randle¹, Shota Okazaki³, Takao Sasagawa³, Takashi Taniguchi⁴, Kenji Watanabe⁴, Manabu Ohtomo², Kenichi Kawaguchi², Yoshiyasu Doi², Shintaro Sato², Koji Ishibashi¹ (1.RIKEN, 2.Fujitsu, 3.Tokyo Tech, 4.NIMS)

Keywords:Tungsten ditelluride, Nanodevice, Transition metal dichalcogenide

WTe₂ is a transition metal dichalcogenide characterized with various intriguing properties such as the two-dimensional topological insulator groudstate and field-induced superconducting state. We fabricated nanoscale FET devices with a monolayer WTe₂ flake as a channel in the aim of accessing and controlling the topological properties using mesoscopic device sctuctures. By sweeping backgate voltage oscillating conductivity was found, suggesting transport across the multiple Coulomb islands is realized.