[23a-E202-1~10] 15.4 III-V-group nitride crystals

[23a-E202-7] HEMT for active matrix of micro LEDs display

〇Yuta Furusawa¹, Wentao Cai², Jeonghwan Park², Heajeong Cheong^2,3, Yasuhisa Ushida¹, Hiroshi Amano^1,3,4 (1.IMaSS, Nagoya Univ., 2.Grad. school of Eng., Nagoya Univ., 3.VBL, Nagoya Univ., 4.ARC, Nagoya Univ.)

Keywords:nitride semiconductor, micro LED, HEMT

Active microLED display needs a driver to control micro LEDs. Ⅲ-Ⅴ nitrides can make both a LED and a high electron mobility transistor. We tried to integrate LED and HEMT except regrowth.We make sure that 2DEG on undoped GaN. It was found that LED made a blue light through MQW and pGaN on HEMT.We were able to make both HEMT and LED on a same wafer.