[23a-E204-1~10] 6.3 Oxide electronics

[23a-E204-9] Preparation of transition metal oxide thin films on the large-area CVD-grown hBN sheet

〇Shingo Genchi¹, Satoru Fukamachi², Ai I. Osaka¹, Azusa N. Hattori¹, Hiroki Ago², Hidekazu Tanaka¹ (1.Osaka Univ., 2.Kyushu Univ. GIC)

Keywords:metal-insulator transition, hexagonal boron nitride, thin film growth

In this study, we report the growth of transition metal oxide thin films on hBN sheet grown by chemical vapor deposition (CVD) method in an aim for flexible device application. We observed clear Raman peaks of Fe₃O₄ at any measurement points in the Fe₃O₄ thin film on CVD-hBN sheet grown by pulsed laser deposition. We are going to report the result of the structural analysis of the thin film by X-ray diffraction and the electrical transport property in the transferred sheet on the presentation day.