Spin transport in GaN using ferromagnetic Heusler alloy/<em>n</em><sup>+</sup>-GaN Schottky tunnnel contacts

Masatoshi Kato, Shinya Yamada, Shuhei Ichikawa, Shuhei Kobayashi, Michihiro Yamada, Takahiro Naito, Jun Tatebayashi, Yasufumi Fujiwara, Kohei Hamaya

Presentation information

Oral presentation

CS Code-sharing session » 【CS.9】 Code-sharing Session of 13.7 & 15.6

[23a-E302-1~11] CS.9 Code-sharing Session of 13.7 & 15.6

Wed. Mar 23, 2022 9:00 AM - 12:00 PM E302 (E302)

Masashi Kato(Nagoya Inst. of Tech.)

9:00 AM - 9:15 AM

[23a-E302-1] Spin transport in GaN using ferromagnetic Heusler alloy/n⁺-GaN Schottky tunnnel contacts

〇(M1)Masatoshi Kato¹, Shinya Yamada^2,1, Shuhei Ichikawa³, Shuhei Kobayashi³, Michihiro Yamada^2,4, Takahiro Naito¹, Jun Tatebayashi³, Yasufumi Fujiwara^3,2, Kohei Hamaya^2,1 (1.GSES, Osaka Univ., 2.CSRN, Osaka Univ., 3.GSE, Osaka Univ., 4.JST-PRESTO)

Keywords:GaN, Heusler alloy, Semiconductor spintronics

« Previous in this session
Next in this session »

▲

Presentation information

[23a-E302-1~11] CS.9 Code-sharing Session of 13.7 & 15.6

[23a-E302-1] Spin transport in GaN using ferromagnetic Heusler alloy/n+-GaN Schottky tunnnel contacts

[23a-E302-1] Spin transport in GaN using ferromagnetic Heusler alloy/n⁺-GaN Schottky tunnnel contacts