[23a-E302-1~11] CS.9 Code-sharing Session of 13.7 & 15.6

[23a-E302-2] Fabrication of GaN/AlN resonant tunneling diodes on Si (111) substrate

〇Masanori Nagase¹, Tokio Takahashi¹, Mitsuaki Shimizu¹ (1.AIST)

Keywords:nitride semiconductor, quantum well, nonvolatile memory

Improvement of nonvolatile memory characteristics is important for the realization of IoT society and Society 5.0. We are studying a high-speed nonvolatile memory using the intersubband transitions in GaN-based resonant tunneling diodes (GaN-based RTDs). In this presentation, nonvolatile memory characteristics using the GaN-based RTDs fabricated on Si (111) substrate are reported toward the realization of integration of this memory with Si and related devices.