[23a-E302-1~11] CS.9 Code-sharing Session of 13.7 & 15.6

△ [23a-E302-5] Electrical characterization and microstructural analysis on GaN/AlN two-dimensional hole gas structure on sputter-annealed AlN

〇Kaito Nishimura¹, Yuta Nakanishi¹, Yusuke Hayashi¹, Tetsuya Tohei¹, Reet Chaudhuri², Yongjin Cho², Huili (Grace) Xing², Debdeep Jena², Kenjiro Uesugi^3,4, Hideto Miyake^4,5, Akira Sakai¹ (1.Osaka Univ., 2.Cornell Univ., 3.SPORR, 4.Grad.Sch.RIS.Mie Univ., 5.Grad.Sch.Eng.Mie Univ.)

Keywords:nitride semiconductor, 2DHG, GaN/AlN

In AlGaN/GaN devices, high-mobility and high-density two-dimensional electron gas (2DEG) has been confirmed in high-frequency bands and has been put to practical use. On the other hand, polarization-induced two-dimensional hole gas (2DHG) was first confirmed in GaN/AlN structures in 2019. In this study, GaN/AlN structures were formed on FFA Sp-AlN templates, which are made of sputtered AlN with high quality by face-to-face annealing, and electrical characterization and microstructure analysis were carried out.