[23a-E302-1~11] CS.9 Code-sharing Session of 13.7 & 15.6

[23a-E302-4] Two-dimensional characterization of forming operation of doped-AlN layers by scanning internal photoemission microscopy

〇Yuto Kawasumi¹, Hiroki Imabayashi¹, Kenji Shiojima¹ (1.Univ. of Fukui)

Keywords:switching device, forming, scanning internal photoemission microscopy

Two-dimensional characterization was performed by scanning internal photoemission microscopy (SIPM) for the forming phenomena of doped-AlN switching devices. In the initial condition, Y and E_g images were uniform. After forming by applied voltage, we observed a region which Y increased partially and E_g decreased by about 0.5 eV and clarified the mechanism of lowering of resistance.