The 69th JSAP Spring Meeting 2022

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CS Code-sharing session » 【CS.9】 Code-sharing Session of 13.7 & 15.6

[23a-E302-1~11] CS.9 Code-sharing Session of 13.7 & 15.6

Wed. Mar 23, 2022 9:00 AM - 12:00 PM E302 (E302)

Masashi Kato(Nagoya Inst. of Tech.)

10:45 AM - 11:00 AM

[23a-E302-7] Surface Arsenide Layer for MOCVD of III-V Materials on GaN

〇Takuya Hoshi1, Yuki Yoshiya1, Hiroki Sugiyama1, Fumito Nakajima1, Hideaki Matsuzaki1 (1.NTT Device Technology Labs.)

Keywords:GaN HEMT, Arsenidation, MOCVD