[23a-E302-1~11] CS.9 Code-sharing Session of 13.7 & 15.6

△ [23a-E302-9] 3D Processing of GaN by Photo Enhanced Chemical Etching Method Utilizing Multi-Photon Excitation

〇Nonoka Niwa¹, Seiya Kawasaki¹, Takeru Kumabe¹, Atsushi Tanaka², Manato Deki³, Shugo Nitta², Yoshio Honda², Hiroshi Amano^2,3,4 (1.Dept. of Electronics, Nagoya Univ., 2.IMaSS Nagoya Univ., 3.VBL Nagoya Univ., 4.ARC Nagoya Univ.)

Keywords:GaN

In recent years, wet processing of GaN has been realized by the photoelectrochemical etching method. However, it is difficult to perform complicated three-dimensional processing of GaN by this method. Therefore, we thought that GaN three-dimensional processing would be possible if the hole carriers by photochemical etching could be used as hole carriers by multi-photon excitation, which enables local excitation in semiconductors. We report on the feasibility of damage less multiphoton photochemical etching with GaN.