[23a-E307-1~11] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

[23a-E307-1] Single-electron tunneling in Si nano-transistors co-doped at high concentration

〇Tsutomu Kaneko¹, Taruna Teja Jupalli¹, Shumpei Miura¹, Kensuke Yamaguchi¹, Daniel Moraru¹ (1.Shizuoka Univ.)

Keywords:Dopant, Single electron transistor, Quantum dots