[23a-E307-1~11] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

[23a-E307-8] Non-equilibrium dynamics and charge noise in gate-controlled Si-MOS devices

〇Katsuya Sato¹, Satoru Miyamoto¹, Noritaka Usami¹ (1.Nagoya Univ.)

Keywords:Si-MOS, charge noise, Non-equilibrium