[23a-F407-1~8] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[23a-F407-4] Crystal quality of InGaSb inserted InAsSb layer on GaAs substrate

〇Koki Hombu¹, Shota Nakagawa¹, Yuto Iwakiri¹, Koji Maeda¹, Masakazu Arai¹ (1.Univ. of Miyazaki)

Keywords:InAsSb, mid-infrared, MOVPE

InAsSb is a promising material for light-emitting and light-receiving devices in the mid-infrared wavelength range. we investigated the introduction of an InGaSb buffer layer in order to grow high-quality InAsSb on GaAs substrates. The introduction of a 30 nm InGaSb layer improved the surface flatness. In addition, the photoluminescence intensity at room temperature was increased.